[Parameters]
simulation.type = transistor
grid.x = 128
grid.y = 64
grid.z = 1
coulomb.carriers = true
defects.charge = 0
output.is.on = false
iterations.print = 5
electron.percentage = 0.10
hole.percentage = 0.00
seed.charges = 0.00
defect.percentage = 0.00
trap.percentage = 0.25
trap.potential = 1.00
gaussian.stdev = 0.00
seed.percentage = 0.10
voltage.right = 5.00
voltage.left = 0.00
source.rate = 0.90
drain.rate = 0.90
temperature.kelvin = 300.0
use.opencl = true
work.x = 4
work.y = 4
work.z = 4
work.size = 256